Chen, ShiWang, ZhaowuFan, LeleChen, YuliangRen, HuiJi, HengNatelson, DouglasHuang, YingyingJiang, JunZou, Chongwen2017-10-272017-10-272017Chen, Shi, Wang, Zhaowu, Fan, Lele, et al.. "Sequential insulator-metal-insulator phase transitions of VO2 triggered by hydrogen doping." <i>Physical Review B,</i> 96, no. 12 (2017) American Physical Society: https://doi.org/10.1103/PhysRevB.96.125130.https://hdl.handle.net/1911/97813As a typical correlated oxide, V O 2 has attracted significant attentions due to its pronounced thermal-driven metal-insulator transition. Regulating electronic density through electron doping is an effective way to modulate the balance between competing phases in strongly correlated materials. However, the electron-doping triggered phase transitions in V O 2 as well as the intermediate states are not fully explored. Here, we report a controlled and reversible phase transition in V O 2 films by continuous hydrogen doping. Metallic and insulating phases are successively observed at room temperature as the doping concentration increases. The doped electrons linearly occupy V 3 d -O 2 p hybridized orbitals and consequently modulate the filling of the V O 2 conduction band edge states, resulting in the electron-doping driven continuous phase transitions. These results suggest the exceptional sensitivity of V O 2 electronic properties to electron concentration and orbital occupancy, providing key information for the phase transition mechanism.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articleSequential_insulator-metal-insulator_phase_transitionshttps://doi.org/10.1103/PhysRevB.96.125130