Li, TingxinWang, PengjieSullivan, GerardLin, XiDu, Rui-Rui2018-07-112018-07-112017Li, Tingxin, Wang, Pengjie, Sullivan, Gerard, et al.. "Low-temperature conductivity of weakly interacting quantum spin Hall edges in strained-layer InAs/GaInSb." <i>Physical Review B,</i> 96, no. 24 (2017) American Physical Society: https://doi.org/10.1103/PhysRevB.96.241406.https://hdl.handle.net/1911/102370We report low-temperature transport measurements in strainedﾠInAs/Ga0.68In0.32Sbﾠquantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttps://doi.org/10.1103/PhysRevB.96.241406