Wilson, William L., Jr.2009-06-042009-06-041995Rodriguez, Juan Antonio. "Process design and circuit model development." (1995) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/13990">https://hdl.handle.net/1911/13990</a>.https://hdl.handle.net/1911/13990Process design for integrated circuit manufacturing has traditionally been implemented with little simulation prior to fabrication. As with circuit design of a decade ago, the available simulation tools were mainframe-based, often incompatible, and lacked accurate physical models. Recent developments in process and device simulation allow accurate process modeling which reflect actual fabrication plant capabilities. A highly structured simulation environment implemented for development of Texas Instruments' PRISM$\rm\sp{TM}$ technology is described, together with results of a simulation approach to circuit model development for a new class of silicon power transistors. A new analytical model for field effect transistor modeling is also proposed. This new model preserves continuity of both the drain current and conductance over all bias conditions. It also accurately models the effects of substrate bias on device behavior.166 p.application/pdfengCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.ElectronicsElectrical engineeringProcess design and circuit model developmentThesisTHESIS E.E. 1995 RODRIGUEZ