Du, LingjieKnez, IvanSullivan, GerardDu, Rui-Rui2015-05-152015-05-152015Du, Lingjie, Knez, Ivan, Sullivan, Gerard, et al.. "Robust Helical Edge Transport in Gated InAs/GaSb Bilayers." <i>Physcial Review Letters,</i> 114, (2015) American Physical Society: 96802. http://dx.doi.org/10.1103/PhysRevLett.114.096802.https://hdl.handle.net/1911/80218We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e2/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length. These characteristics persist in a wide temperature range and show essentially no temperature dependence. The quantized plateaus persist to a 12ﾠT applied in-plane field; the conductance increases from 2e2/h in strong perpendicular fields manifesting chiral edge transport. Our study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttp://dx.doi.org/10.1103/PhysRevLett.114.096802