Knez, IvanRettner, Charles T.Yang, See-HunParkin, Stuart S.P.Du, LingjieDu, Rui-RuiSullivan, Gerard2014-01-212014-01-212014-01Knez, Ivan, Rettner, Charles T., Yang, See-Hun, et al.. "Observation of Edge Transport in the Disordered Regime of Topologically Insulating InAs/GaSb Quantum Wells." <i>Physical Review Letters,</i> 112, no. 2 (2014) American Physical Society: 26602. http://dx.doi.org/10.1103/PhysRevLett.112.026602.https://hdl.handle.net/1911/75347We observe edge transport in the topologically insulating InAs=GaSb system in the disordered regime. Using asymmetric current paths we show that conduction occurs exclusively along the device edge, exhibiting a large Hall signal at zero magnetic fields, while for symmetric current paths, the conductance between the two mesoscopicly separated probes is quantized to 2e2=h. Both quantized and self-averaged transport show resilience to magnetic fields, and are temperature independent for temperatures between 20 mK and 1 K.engArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.Journal articlehttp://dx.doi.org/10.1103/PhysRevLett.112.026602