Rabson, Thomas A.2009-06-042009-06-042002Wang, Xuguang. "Electrical characterizations of lithium niobate thin films in a metal-ferroelectric-semiconductor capacitor." (2002) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/17559">https://hdl.handle.net/1911/17559</a>.https://hdl.handle.net/1911/17559A LiNbO3 thin film Metal-Ferroelectric-Semiconductor capacitor is analyzed with various electrical characterization methods for studying the polarization switching and the thin film conduction behavior. The polarization density vs. electric field (P-E) curve shows that the remnant polarization is 16.85muC/cm2 and the coercive field is 117.25 KV/cm when maximum applied field is 286.2KV/cm for a sinusoidal input waveform. The capacitance vs. voltage bias (C-V) curve further demonstrates that the polarization charge is the dominant charge in controlling the ferroelectric semiconductor interface property. The switching transient current curve from a dual polarity four pulses chain study (P-S) gives the switching time of the sample about 80--100ns. Current vs. voltage (I--V) curve is explained with a back-to-back Schottky barrier controlled conduction mechanism. These electrical characterization results demonstrate that LiNbO3 is a promising candidate for a Metal-Ferroelectric-Semiconductor-Field-Effect-Transistor (MFSFET) non-volatile non-destructive memory application.65 p.application/pdfengCopyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder.ElectronicsElectrical engineeringThesisTHESIS E.E. 2002 WANG