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Hackerman, Norman Margrave, John L. McLellan, Rex B. Tanizawa, Yoshiaki 2018-12-18T21:20:21Z 2018-12-18T21:20:21Z 1980 Tanizawa, Yoshiaki. "Semiconducting properties of the passive films on copper." (1980) Master’s Thesis, Rice University. <a href="https://hdl.handle.net/1911/104283">https://hdl.handle.net/1911/104283</a>. https://hdl.handle.net/1911/104283 RICE1915 Thesis Chem. 1980 Tanizawa The semiconducting properties of the passive films on copper have been investigated through capacitance, photoresponse and kinetic measurements. Mott-Schottky plots show that the passive films on copper are p-type semiconductors. The metal deficits form the electron acceptors, which give rise to p-type conductivity. The passive films show photovoltages under illumination. The band gaps of the anodic films and thermal oxides are similar to that of CuO (1.7 eV). The band gap of the film formed in CuSOi+ is close to that of Q12O (2.2 eV). The electron transfer between the passive electrodes and the redox couple shows diffusion controlled kinetics. The large exchange current is explained in terms of the formation of an accumulation layer in the valence band. 94 pp reformatted digital eng Copyright is held by the author, unless otherwise indicated. Permission to reuse, publish, or reproduce the work beyond the bounds of fair use or other exemptions to copyright law must be obtained from the copyright holder. Semiconducting properties of the passive films on copper Thesis Text Chemistry Natural Sciences Rice University Masters Master of Arts open.access